electrical properties of Ba-Pb-Bi-O superconducting materials

Herbirowo, Satrio and Hendrik, Hendrik and nugraha, heri and Imaduddin, Agung and aisatun, aisatun and giovanni, anastasia ruth and effendi, mukhtar and sari, kartika and PRAMONO, WIDYA ANDIKA and Yuwono, Akhmad Herman (2023) electrical properties of Ba-Pb-Bi-O superconducting materials. South African Journal of Chemical Engineering, 46. pp. 112-121. ISSN 10269185

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Abstract

Bismuthate superconductor material has a transition from a semiconductor/conductor to a superconductor. Research on this transition temperature has attracted many researchers' attention to reveal this material's superconducting properties. We synthesized the materials by the solid-state reaction method. Samples were synthesized with variations in sintering temperature and also with variations in Bi-doping. X-ray diffractometer (XRD), scanning electron microscope (SEM), and resistivity versus temperature measurements were used to analyse the crystal structure, morphology, and electrical characteristics, respectively. Based on SEM results, there were no significant changes with the increase in sintering temperature. However, from x = 0 to 0.40 there was a change in the crystallization properties which changed according to the amount of doping of the Bi element. Based on the XRD results, the major phases were Ba4Bi(PbO4)3 with a tetragonal crystal structure and P4/mmm space group, and BaPbO3 with a cubic crystal structure and Pm-3m space group . The increase in the sintering temperature causes a change in the insulator-metal-insulator properties. In the variation of Bi composition, the evolution of phase formation of Ba4Bi(PbO4)3 starts at x = 0.20 and then decreases drastically when x = 0.40. TC was detected at a value of x less than 0.35, indicating that the effect of Bi composition below x = 0.35 does not significantly affect the electrical properties. The increase in the Bi composition causes changes in the metal-insulator-metal properties. At x = 0.2 to 0.25, there is a change in the crystal structure which is thought to cause the semiconductor properties to be above the TC.

Item Type: Article
Additional Information: This research was supported financially by LPDP (Indonesia Endowment Fund for Education), Ministry of Finance, Republic of Indonesia. The authors Agung Imaduddin, Heri Nugraha, Satrio Herbirowo, Hendrik, Aisatun, Anastasia Ruth Giovanni, Mukhtar Effendi, Kartika Sari, Andika Widya Pramono and Akhmad Herman Yuwono certify that they have no affiliations with or involvement in any organization or entity with any financial interest (such as honoraria; educational grants; participation in speakers’ bureaus; membership, employment, consultancies, stock ownership, or other equity interest; and expert testimony or patent-licensing arrangements), or non-financial interest (such as personal or professional relationships, affiliations, knowledge or beliefs) in the subject matter or materials discussed in this paper.
Uncontrolled Keywords: Ba4Bi(PbO4)3, BaPbO3 Superconductor Critical temperature Bi-doping Sintering temperature
Subjects: Jurnal
Bidang Keilmuan > Materials Science
Bidang Keilmuan > Mechanical Engineering
Bidang Keilmuan > Teknik Mesin
Divisions: Fakultas Teknologi dan Bisnis Energi > S1 Teknik Mesin
Depositing User: Yudha Formanto
Date Deposited: 10 Oct 2025 08:20
Last Modified: 10 Oct 2025 08:20
URI: https://repository.itpln.ac.id/id/eprint/2058

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