In HPMC–Si ingots growth, seeding is the key factor to control the final structure of Silicon PV ingots. The targeted grain structure is composed of numerous randomly oriented grains which favors the termination of the propagation of dislocation clusters. In the present work, three different 60 kg ingots are directionally solidified with varied melting conditions. The subsequent grain structure development and arrangement are characterized by photoluminescence, metallography, and EBSD. Two grain morphologies are generated in the seed layer: genuine non-melted seed from the poly-Si chunks and seed grains due to re-solidification of infiltrated molten silicon. Temperatures applied during the melting segment and gap width in between poly-Si chips are found to influence the morphology of the re-solidified seed (equiaxed/columnar) and to have an impact on grain coarsening of the non-melted seed. As expected, both seed morphologies generate random orientation of grains. However, initial grain size and homogeneity depend on the melting segment processing parameters. Moreover, wider grains of the seed layer are more prone to propagate higher in the grown ingot. These results give prospects to improve seed arrangement and parameter control to obtain the best properties for the HPMC-Si ingots that is the efficient termination of dislocation clusters.